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DATA SHEET
NPN SILICON EPITAXIAL TRANSISTOR
2SC4783
NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC4783 is NPN silicon epitaxial transistor.
PACKAGE DRAWING (Unit: mm)
0.3 0.05 0.1 +0.1 -0.05
FEATURES
1.6 0.1 0.8 0.1
* High DC current gain: hFE2 = 200 TYP. * High voltage: VCEO = 50 V
3 0 to 0.1 2 0.2 +0.1 -0 0.5 0.5 1.0 1.6 0.1 0.6 0.75 0.05 1
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (pulse)
Note1 Note2
VCBO VCEO VEBO IC(DC) IC(pulse) PT Tj Tstg
60 50 5.0 100 200 200 150 -55 to + 150
V V V mA mA mW C C
Total Power Dissipation (TA = 25C) Junction Temperature Storage Temperature Range
1: Emitter 2: Base 3: Collector
Notes 1. PW 10 ms, Duty Cycle 50% 2 2. When mounted on ceramic substrate of 3.0 cm x 0.64 mm
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Collector Cut-off Current Emitter Cut-off Current DC Current Gain
Note
SYMBOL ICBO IEBO hFE1 hFE2
TEST CONDITIONS VCB = 60 V, IE = 0 VEB = 5.0 V, IC = 0 VCE = 6.0 V, IC = 0.1 mA VCE = 6.0 V, IC = 1.0 mA VCE = 6.0 V, IC = 1.0 mA IC = 100 mA, IB = 10 mA IC = 100 mA, IB = 10 mA VCE = 6.0 V, IE = -10 mA VCE = 6.0 V, IE = 0, f = 1.0 MHz
MIN.
TYP.
MAX. 100 100
UNIT nA nA -
50 90 200 0.62 0.15 0.86 150 250 3.0 4.0 0.3 1.0 600
- V V V MHz pF
Base to Emitter Voltage
Note Note
VBE VCE(sat) VBE(sat) fT Cob
Collector Saturation Voltage Base Saturation Voltage Gain Bandwidth Product Output Capacitance
Note
Note Pulsed: PW 350 s, Duty Cycle 2%
hFE CLASSFICATION
Marking hFE2 L4 90 to 180 L5 135 to 270 L6 200 to 400 L7 300 to 600
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D15616EJ1V0DS00 (1st edition) Date Published July 2001 NS CP(K) Printed in Japan
(c)
2001
2SC4783
TYPICAL CHARACTERISTICS (TA = 25C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 300
COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE 100 VCE = 6.0 V
PT - Total Power Dissipation - mW
Free air
W
IC - Collector Current - mA
250
he
30 10
=7 5C 25 C -25 C
200 150 100 50
nm
ou
nte
do
3 1 0.3 0.1 0.03
nc
er
am
bs
tra
te
of
3.0
cm 2 x0
.64
mm
0
25
50
75
100
125
150
0.01 0.4
0.5
TA
ic
su
0.6
0.7
0.8
0.9
1.0
TA - Ambient Temperature - C
VBE - Base to Emitter Voltage - V
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 100
IC - Collector Current - mA
1.0 0.9 0.8
0.7
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 10 45
40
IC - Collector Current - mA
80 60
0.6 0.5
8 6
35 30 25 20
0.4
0.3
0.2
40
4
15 10
20
IB = 0.1 mA
2
IB = 5.0 A
0
0.5
1.0
1.5
2.0
0
10
20
30
40
50
VCE - Collector to Emitter Voltage - V
VCE - Collector to Emitter Voltage - V
COLLECTOR AND BASE SATURATION VOLTAGE vs. COLLECTOR CURRENT
VBE(sat) - Base Saturation Voltage - V VCE(sat) - Collector Saturation Voltage - V
OUTPUT CAPACITANCE vs. REVERSE VOLTAGE 10
f = 1.0 MHz
1 VBE(sat)
Cob - Output Capacitance - pF
IC = 10 . IB
0.5 0.2 0.1 0.05 0.02 0.01 1 2 5 10 20 VCE(sat)
5 2 1 0.5 0.2 0.1 1 2 5 10 20 50 100
50
100
IC - Collector Current - mA
VCB - Collector to Base Voltage - V
2
Data Sheet D15616EJ1V0DS
2SC4783
DC CURRENT GAIN vs. COLLECTOR CURRENT 1000 500
hFE - DC Current Gain
DC CURRENT GAIN vs. COLLECTOR CURRENT 1000 500 VCE = 6.0 V
200 100 50 20 10 0.1
VCE = 6 V 1V
hFE - DC Current Gain
TA = 75C 25C -25C
200 100 50 20 10 0.1
0.3
1
3
10
30
100
0.3
1
3
10
30
100
IC - Collector Current - mA
GAIN BANDWIDTH PRODUCT vs. EMITTER CURRENT 1000
fT - Gain Bandwidth Product - MHz
IC - Collector Current - mA
500 200 100 50 20 10 -1 -2 -5
VCE = 6 V 1V
-10
-20
-50
-100
IE - Emitter Current - mA
Data Sheet D15616EJ1V0DS
3
2SC4783
* The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

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